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| IGBT MODULE ( N series ) n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1 Ratings 1200 20 100 200 100 200 780 +150 -40 +125 2500 3.5 3.5 Units V V A W C C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=100mA VGE=15V IC=100A VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE= 15V RG=9.1 IF=100A VGE=0V IF=100A Min. Typ. Max. 2.0 30 7.5 3.3 Units mA A V V pF 1.2 0.6 1.5 0.5 3.0 350 4.5 16000 5800 5160 0.65 0.25 0.85 0.35 s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.16 0.33 Units C/W 0.025 Collector current vs. Collector-Emitter voltage T j=25C 250 V GE =20V,15V,12V,10V 200 200 250 Collector current vs. Collector-Emitter voltage T j=125C V GE =20V,15V,12V,10V [A] C C [A] Collector current : I 150 150 100 100 8V 50 8V 50 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage T j=25C 10 10 Collector current : I Collector-Emitter vs. Gate-Emitter voltage T j=125C [V] CE Collector-Emitter voltage :V 6 Collector-Emitter voltage V CE 8 [V] 8 6 4 IC= 200A 100A 4 IC= 200A 100A 50A 2 50A 2 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current V CC =600V, R G =9.1 , V GE 15V, T j=25C 1000 t OFF t ON 1000 Switching time vs. Collector current V CC =600V, R G =9.1 , V GE =15V, T j=125C t OFF t ON tf tr [nsec] ON, t r, t OFF , t f 100 ON, t r, t OFF , t f [nsec] 100 tf tr Switching time : t 10 0 50 100 150 200 Collector current : I C [A] Switching time : t 10 0 50 100 150 200 Collector current : I C [A] Switching Time vs. R G V CC =600V, I C =100A, V GE =15V, T j=25C 1000 Dynamic Input Characteristics T j=25C 25 V CC =400V [V] t OFF [ns] 800 600V CE ON, t r, t OFF , t f Collector-Emitter Voltage : V 600 tr tf 400 10 200 100 5 0 10 Gate Resistance : R G [ ] 0 400 800 [nC] Gate Charge : Q G 1200 0 Forward Current vs. Forward Voltage V GE =0V 250 Reverse Recovery Characteristics t rr, I rr vs. I F t rr [A] 200 [ns] T j=125C 25C rr 125C t rr 25C I rr 125C I rr 25C rr [A] Reverse Recovery Current : I 150 :t F Forward Current : I 100 100 50 0 0 1 2 3 4 5 Forward Voltage : V F [V] Reverse Recovery Time 10 0 50 100 150 200 Forward Current : I F [A] Reversed Biased Safe Operating Area Transient Thermal Resistance 1 1000 +V GE =15V, -V GE <15V, T j<125C, R G >9.1 [C/W] Diode 0,1 IGBT C 800 th(j-c) [A] Collector Current : I SCSOA 600 (non-repetitive pulse) Thermal resistance : R 400 0,01 200 RBSOA (Repetitive pulse) 0,001 0,001 0,01 0,1 1 0 0 200 400 600 800 1000 Collector-Emitter Voltage : V CE [V] 1200 Pulse Width : PW [s] Gate-Emitter Voltage : V 15 Switching Time : t GE 1000 [V] t ON 800V 20 Switching loss vs. Collector current V CC =600V, R G =9.1 , V GE =15V 40 Capacitance vs. Collector-Emitter voltage T j=25C [mJ/cycle] 30 E O N 125C E O F F 125C C oes , C res [nF] ON,E OFF ,E rr 10 C ies E O N 25C Switching loss : E Capacitance : C ies , 20 E O F F 25C 10 1 Co e s C res E rr 125C E rr 25C 0 0 50 100 150 200 0 5 10 15 20 25 30 35 Collector Current : I C [A] Collector-Emitter Voltage : V CE [V] Fuji Electric GmbH Lyoner Strae 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708 - Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 - www.collmer.com P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax) |
Price & Availability of 2MBI100NC-120
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